Time domain spectroscopy of the magnetic field induced metal-insulator transition in n:InSb
- Jin Young
- Xuan
- Scott A.
Temperature (T) and frequency ({omega}) dependent conductivity measurements are reported for n-type indium antimonide (InSb) around the magnetic field induced metal-insulator transition (MIT). For the sample with electron density n = 2.15 x 10{sup 14} cm{sup -3}, the critical field is observed at {approx}0.7 T in dc transport measurements. The frequency dependent conductivity {sigma}({omega}) measured via terahertz time domain spectroscopy indicates a higher critical field {approx}1.2 T. Both {sigma}{sub dc}(T) and {sigma}{sub 1}({omega}) at low temperatures show power law dependence with exponents of {alpha} = 1.2.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 977769
- Report Number(s):
- LA-UR-04-5006; TRN: US201012%%713
- Resource Relation:
- Journal Volume: 772; Conference: Submitted to: 27th International Conference on the Physics of Semiconductors, July 2004, Flagstaff, AZ
- Country of Publication:
- United States
- Language:
- English
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