Diffusion-Limited Agglomeration and Defect Generation during Chemical Mechanical Planarization

Journal Article · Fri Jun 06 04:00:00 EDT 2008 · Journal of The Electrochemical Society

DOI:https://doi.org/10.1149/1.2931519· OSTI ID:977142

Biswas, R; Han, Y; Karra, P; Sherman, P; Chandra, A

Chemical mechanical planarization (CMP) of copper involves removal of surface asperities with abrasive particles and polishing processes. This leads to copper-containing nanoparticles extruded into the solution. We model the diffusion-limited agglomeration (DLA) of such nanoparticles which can rapidly grow to large sizes. These large particles are detrimental because they can participate in polishing, causing scratches and surface defects during CMP. The agglomeration is much slower in the reaction-limited agglomeration process. Under realistic conditions the defect generation probability can increase significantly over time scales of {approx}10 to 20 min from DLA, unless prevented by slurry rejuvenation or process modification measures.

• Research Organization: Ames Laboratory (AMES), Ames, IA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC02-07CH11358
• OSTI ID: 977142
• Report Number(s): IS-J 7468; Journal Serial ID: IS0J 7468
• Journal Information: Journal of The Electrochemical Society, Journal Name: Journal of The Electrochemical Society Journal Issue: 8 Vol. 155
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
ABRASIVES
AGGLOMERATION
COPPER
DEFECTS
MODIFICATIONS
POLISHING
PROBABILITY
REMOVAL