Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films
Journal Article
·
· Physical Review Letters
- University of Tokyo, Tokyo, Japan
- ORNL
We have investigated the changes occurring in the electronic structure of digitally controlled SrVO3 ultrathin films across the dimensionality-controlled metal-insulator transition (MIT) by in situ photoemission spectroscopy. With decreasing film thickness, a pseudogap is formed at EF through spectral weight transfer from the coherent part to the incoherent part. The pseudogap finally evolves into an energy gap that is indicative of the MIT in a SrVO3 ultrathin film. The observed spectral behavior is reproduced by layer dynamical-mean-field-theory calculations, and it indicates that the observed MIT is caused by the reduction in the bandwidth due to the dimensional crossover.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 975071
- Journal Information:
- Physical Review Letters, Vol. 104, Issue 14; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gradual localization of Ni 3d states in LaNiO3 ultrathin films induced by dimensional crossover
Role of disorder and correlations in the metal-insulator transition in ultrathin films
Spectroscopic Evidence of a Dimensionality-Induced Metal-to-Insulator Transition in the Ruddlesden–Popper Lan+1NinO3n+1 Series
Journal Article
·
Tue Jan 01 00:00:00 EST 2013
· Physical Review B
·
OSTI ID:975071
+4 more
Role of disorder and correlations in the metal-insulator transition in ultrathin films
Journal Article
·
Mon Oct 07 00:00:00 EDT 2019
· Physical Review B
·
OSTI ID:975071
+7 more
Spectroscopic Evidence of a Dimensionality-Induced Metal-to-Insulator Transition in the Ruddlesden–Popper Lan+1NinO3n+1 Series
Journal Article
·
Tue Jan 26 00:00:00 EST 2021
· ACS Applied Materials and Interfaces
·
OSTI ID:975071
+5 more