Nanoengineering for solid-state lighting.

Technical Report · Tue Sep 01 00:00:00 EDT 2009

DOI:https://doi.org/10.2172/973851· OSTI ID:973851

Schubert, E Fred ^[1]; Koleske, Daniel David; Wetzel, Christian ^[1]; Lee, Stephen Roger; Missert, Nancy A; Lin, Shawn-Yu ^[1]; Crawford, Mary Hagerott; Fischer, Arthur Joseph

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1. Rensselaer Polytechnic Institute,Troy, NY

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 973851
• Report Number(s): SAND2009-6130
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
DIELECTRIC MATERIALS
EFFICIENCY
Light emitting diodes.
Nanoelectronics.
QUANTUM EFFICIENCY
Solid state lighting