Graphene Growth by Metal Etching on Ru (0001)
Journal Article
·
· Physical Review B
OSTI ID:973528
Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms from a step edge are injected under a growing graphene sheet. The injected atoms can form under-graphene islands, or incorporate into the topmost Ru layer, thereby increasing its density and forming dislocation networks. Density functional calculations imply that Ru islands nucleated between the graphene layer and the substrate are energetically stable; scanning tunneling microscopy (STM) reveals that dislocation networks exist near step edges.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 973528
- Report Number(s):
- LBNL-2548E
- Journal Information:
- Physical Review B, Journal Name: Physical Review B; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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