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Title: Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors

Journal Article · · Physical Review B
OSTI ID:973055

We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a 'holographic metal' at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
973055
Report Number(s):
SLAC-REPRINT-2010-053; TRN: US1001693
Journal Information:
Physical Review B, Vol. 74, Issue 8; ISSN 1098-0121
Country of Publication:
United States
Language:
English

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