Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
Journal Article
·
· Physical Review B
OSTI ID:973055
We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a 'holographic metal' at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.
- Research Organization:
- SLAC National Accelerator Laboratory (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 973055
- Report Number(s):
- SLAC-REPRINT-2010-053
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 8 Vol. 74; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quantized Hall conductance as a topological invariant
Fractional charge and quantized current in the quantum spin Hall state
Quantum Spin Hall Effect
Technical Report
·
Mon Oct 01 00:00:00 EDT 1984
·
OSTI ID:5918985
Fractional charge and quantized current in the quantum spin Hall state
Journal Article
·
Mon Mar 01 23:00:00 EST 2010
· Nature Physics
·
OSTI ID:973047
Quantum Spin Hall Effect
Journal Article
·
Thu Jan 14 23:00:00 EST 2010
· Phys.Rev.Lett.96:106802,2006
·
OSTI ID:970440