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Comparative study on the growth of silver nanoplates on GaAs substrates by electron microscopy, synchrotron x-ray diffraction and optical spectroscopy.

Journal Article · · J. Phys. Chem. C
DOI:https://doi.org/10.1021/jp801647k· OSTI ID:973019
We have recently developed a simple and efficient approach involving the galvanic reaction between a pure aqueous solution of AgNO{sub 3} and GaAs wafers to directly grow high-quality Ag nanoplates with chemical clean surfaces on the GaAs wafers [Chem. Mater. 2007, 19, 5845; Small 2007, 3, 1964]. The capability to finely control the dimensions (i.e., size and thickness) of the Ag nanoplates and the time-dependent characterizations have not been explored yet. In this article, time-dependent evolutions of the Ag nanostructures grown on highly doped n-type GaAs wafers through the reactions with AgNO{sub 3} solutions, which have concentrations varying in the range of 1-10 M, for different times have been systematically investigated by employing various powerful techniques including electron microscopy, synchrotron X-ray diffraction, and optical microscopy. The results indicate that the sizes of Ag nanoplates can be tuned in the range from tens of nanometers to half a micrometer and their thicknesses can be varied from -20 to -160 nm by simultaneously controlling the concentration of AgNO{sub 3} solution and the growth time. The as-grown Ag nanoplates exhibit tunable strong extinction peaks in the ultraviolet-visible-near-infrared spectral regimes, where the GaAs substrates intensively interact with the light.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC
DOE Contract Number:
AC02-06CH11357
OSTI ID:
973019
Report Number(s):
ANL/CHM/JA-61098
Journal Information:
J. Phys. Chem. C, Journal Name: J. Phys. Chem. C Journal Issue: 2008 Vol. 112; ISSN 1932-7447
Country of Publication:
United States
Language:
ENGLISH

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