Ferroelectric thin films grown on base-metal foils for embedded passives.
Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and breakdown field strength >1.2 MV/cm.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 971959
- Report Number(s):
- ANL/ES/CP-60591
- Country of Publication:
- United States
- Language:
- ENGLISH
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