Wafer bonded epitaxial templates for silicon heterostructures

Zahler, James M; Morral, Anna Fontcubera I

Title: Wafer bonded epitaxial templates for silicon heterostructures

Patent · Tue Mar 11 00:00:00 EDT 2008

OSTI ID:970493

Zahler, James M ^[1]; Morral, Anna Fontcubera I ^[2]

Pasadena, CA
Paris, FR

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

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Research Organization:: California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-99G010337

Assignee:: California Institute of Technology (Pasadena, CA)

Patent Number(s):: 7,341,927

Application Number:: 11/004,808

OSTI ID:: 970493

Resource Relation:: Patent File Date: 2004 Dec 07

Country of Publication:: United States

Language:: English

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