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Office of Scientific and Technical Information
 

THz physics and devices using high-mobility 2DEG GaAs-AlGaAs heterostructures.

Conference ·
OSTI ID:968421
; ; ;  [1];  [2]; ;  [3]; ; ; ; ; ; ; ;
  1. MIT
  2. UNM
  3. UCSB
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
968421
Report Number(s):
SAND2005-4347C
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
SOLID STATE PHYSICS
THZ RANGE