Defects in AlSb: a density functional study
Journal Article
·
· Physical Review B
- ORNL
We carry out density functional calculations to study both intrinsic and extrinsic defects in AlSb. We focus on the carrier compensation and trapping properties of these defects, which are important to the radiation detection applications. We show that the Sb antisite is a low-energy defect, baring much similarity to the As antisite in GaAs. The SbAl is effective in compensating holes induced by the residual carbon, but is also a deep electron trap that reduces the carrier drifting length. We discuss the possibility of using hydrogenated isovalent N impurity in AlSb and GaAs to pin the Fermi level without causing efficient carrier trapping.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 968272
- Journal Information:
- Physical Review B, Vol. 79, Issue 4; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations
First-principles study of defects and carrier compensation in semiconductor radiation detector materials
Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures
Journal Article
·
Tue Jan 01 00:00:00 EST 2008
· Journal of Applied Physics
·
OSTI ID:968272
First-principles study of defects and carrier compensation in semiconductor radiation detector materials
Conference
·
Thu Jan 01 00:00:00 EST 2009
·
OSTI ID:968272
Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures
Journal Article
·
Fri Feb 03 00:00:00 EST 2017
· Physical Review. B
·
OSTI ID:968272