The Influence of Anisotropic Strain on the Dielectric and Ferroelectric Properties of SrTiO3 Thin Films on DyScO3 Substrates
- ORNL
- Pennsylvania State University
- Pennsylvania State University, University Park, PA
- Institute for Crystal Growth, Berlin, Germany
- Argonne National Laboratory (ANL)
The in-plane dielectric and ferroelectric properties of coherent anisotropically strained SrTiO{sub 3} thin films grown on orthorhombic (101) DyScO{sub 3} substrates were examined as a function of the angle between the applied electric field and the principal directions of the substrate. The dielectric permittivity revealed two distinct maxima as a function of temperature along the [100]{sub p} and [010]{sub p} SrTiO{sub 3} pseudocubic directions. These data, in conjunction with optical second-harmonic generation, show that the switchable ferroelectric polarization develops first predominantly along the in-plane axis with the larger tensile strain before developing a polarization component along the perpendicular direction with smaller strain as well, leading to domain twinning at the lower temperature. Finally, weak signatures in the dielectric and second-harmonic generation response were detected at the SrTiO{sub 3} tilt transition close to 165 K. These studies indicate that anisotropic biaxial strain can lead to new ferroelectric domain reorientation transitions that are not observed in isotropically strained films.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 967112
- Journal Information:
- Physical Review B, Vol. 79, Issue 22; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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