Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Physical Properties of GaN Nanotubes as Revealed by Computer Simulation

Book ·
OSTI ID:967008
Single-crystalline wurtzite GaN nanotubes have been synthesized recently with proposed applications in nanoscale electronics, optoelectronics and the biochemical-sensing field. Molecular dynamics methods with a Stillinger-Weber potential are used to investigate the melting behavior, thermal conductivity and mechanical properties of these wurtzite-type single crystalline GaN nanotubes. Four major topical areas are summarized in this chapter. (1) The melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of bulk GaN. The simulations result reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. (2) The thermal conductivity of nanotubes is smaller than that of the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature. (3) At low temperatures, the simulation results show that the nanotubes exhibit brittle properties; whereas at high temperatures, they behave as ductile materials. The brittle to ductile transition temperature generally increases with increasing wall thickness of the nanotubes and increasing strain rate. (4) The simulation temperature, tube length and strain rate affect the buckling behavior of GaN nanotubes. The critical stress decreases with the increase of simulation temperature and tube length. The dependence of buckling on tube length is consistent with the analysis of equivalent continuum structures using Euler buckling theory.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
967008
Report Number(s):
PNNL-SA-55986; KC0201020
Country of Publication:
United States
Language:
English

Similar Records

Buckling of GaN nanotubes under uniaxial compression
Journal Article · Thu May 01 00:00:00 EDT 2008 · Solid State Communications, 146(7-8):293-297 · OSTI ID:934402

Atomistic Simulation of Brittle to Ductile Transition in GaN Nanotubes
Journal Article · Sun Dec 10 23:00:00 EST 2006 · Applied Physics Letters, 89(24):243123, 1-3 · OSTI ID:898107

Atomic-Level Study of Melting Behavior of GaN Nanotubes
Journal Article · Wed Sep 20 00:00:00 EDT 2006 · Journal of Applied Physics, 100(06):063503, 1-6 · OSTI ID:893659