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Title: Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.

Abstract

The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
966924
Report Number(s):
SAND2008-6217
TRN: US200923%%7
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; QUANTUM DOTS; INTERMEDIATE INFRARED RADIATION; EMISSION; INDIUM ARSENIDES; OPTICAL PROPERTIES; DESIGN; Planar transisters.; Quantum dots-Optical properties.

Citation Formats

Subramania, Ganapathi Subramanian, Lyo, Sungkwun Kenneth, Cederberg, Jeffrey George, Passmore, Brandon Scott, El-Kady, Ihab Fathy, and Shaner, Eric Arthur. Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.. United States: N. p., 2008. Web. doi:10.2172/966924.
Subramania, Ganapathi Subramanian, Lyo, Sungkwun Kenneth, Cederberg, Jeffrey George, Passmore, Brandon Scott, El-Kady, Ihab Fathy, & Shaner, Eric Arthur. Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.. United States. doi:10.2172/966924.
Subramania, Ganapathi Subramanian, Lyo, Sungkwun Kenneth, Cederberg, Jeffrey George, Passmore, Brandon Scott, El-Kady, Ihab Fathy, and Shaner, Eric Arthur. Mon . "Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.". United States. doi:10.2172/966924. https://www.osti.gov/servlets/purl/966924.
@article{osti_966924,
title = {Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.},
author = {Subramania, Ganapathi Subramanian and Lyo, Sungkwun Kenneth and Cederberg, Jeffrey George and Passmore, Brandon Scott and El-Kady, Ihab Fathy and Shaner, Eric Arthur},
abstractNote = {The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.},
doi = {10.2172/966924},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {9}
}

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