Characterization of thin-film multilayers using magnetization curves and modeling of low-angle X-ray diffraction data

Technical Report · Thu Dec 01 04:00:00 EST 1994

DOI:https://doi.org/10.2172/96639· OSTI ID:96639

Lane, M. ^[1]; Chaiken, A.; Michel, R. P. ^[2]

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1. Emory & Henry College, VA (United States)
2. Lawrence Livermore National Lab., CA (United States)

We have characterized thin-film multilayers grown by ion-beam sputtering using magnetization curves and modeling of low-angle x-ray diffraction data. In our films, we use ferromagnetic layer = Co, Fe, and NiFe and spacer layer = Si, Ge, FeSi{sub 2}, and CoSi{sub 2}. We have studied the effects of (1) deposition conditions; (2) thickness of layers; (3) different layer materials; and (4) annealing. We find higher magnetization in films grown at 1000V rather than 500V and in films with spacer layers of 50{angstrom} rather than 100{angstrom}. We find higher coercivity in films with cobalt grown on germanium rather than silicon, metal grown on gold underlayers rather than on glass substrates, and when using thinner spacer layers. Finally, modeling reveals that films grown with disilicide layers are more thermally stable than films grown with silicon spacer layers.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• OSTI ID: 96639
• Report Number(s): UCRL-ID--114972-3; ON: DE95009444
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANNEALING
COBALT SILICIDES
ELECTRON DENSITY
GERMANIUM
GLASS
GOLD
IRON SILICIDES
LAYERS
MAGNETIZATION
MORPHOLOGY
SPUTTERING
THIN FILMS