Electronic structure and thermoelectric properties of layered PbSe-WSe2 materials
Journal Article
·
· Physical Review B
- ORNL
The first members of the series of intergrowth PbSe-WSe{sub 2} compounds are investigated using first-principles electronic-structure calculations and Boltzmann transport theory. These materials are moderate band-gap semiconductors. The valence-band edges are primarily derived from PbSe-derived states while the conduction bands have mixed PbSe-WSe{sub 2} character. The transport calculations show that high thermopowers are attainable at moderate to high p-type doping levels, consistent with good thermoelectric performance at temperatures from 300 to 1000 K.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 965316
- Journal Information:
- Physical Review B, Vol. 80, Issue 7; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Understanding the role and interplay of heavy-hole and light-hole valence bands in the thermoelectric properties of PbSe
Zintl-phase compounds with SnSb4 tetrahedral anions. Electronic structure and thermoelectric properties
Zintl-phase compounds with SnSb4 tetrahedral anions: electronic structure and thermoelectric properties
Journal Article
·
Sun Feb 15 00:00:00 EST 2015
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:965316
+4 more
Zintl-phase compounds with SnSb4 tetrahedral anions. Electronic structure and thermoelectric properties
Journal Article
·
Mon Feb 22 00:00:00 EST 2010
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:965316
Zintl-phase compounds with SnSb4 tetrahedral anions: electronic structure and thermoelectric properties
Journal Article
·
Fri Jan 01 00:00:00 EST 2010
· Physical Review B
·
OSTI ID:965316