Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers
- University of Delaware
(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (αhν)2 vs. hν, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.
- Research Organization:
- University of Delaware, Newark, DE
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy (EE); USDOE EERE Office of Solar Energy Technology (EE-2A)
- DOE Contract Number:
- FG36-08GO18019
- OSTI ID:
- 963894
- Report Number(s):
- DOE/GO/18019-2
- Country of Publication:
- United States
- Language:
- English
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