Crystallographich phase transition and island height selection in In/Si(111) growth
In/Si(111) has been studied with spot profile analysis low-energy electron diffraction, scanning tunneling microscope, and first-principles total energy calculations to identify its growth morphology at low temperatures. Of the different substrate interfaces used, only In growth on Si(111)- Pb-{alpha}-{radical}3 x {radical}3 has resulted in uniform height fcc (111) four-layer islands. A transition to the bulk bct (101) oriented islands is favored at higher temperatures T>250K and/or larger coverages {Theta} > 5ML. These results suggest two stabilizing effects for the preferred morphologies, i.e., quantum size effects and orientation dependent surface and interface energies. These stabilizing effects are supported from first-principles calculations.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC02-07CH11358
- OSTI ID:
- 962576
- Report Number(s):
- IS-J 7350
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 23 Vol. 77; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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