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K-Doping Dependence of the Fermi Surface of the Iron-Arsenic Ba1-xKxFe2As2 Superconductor Using Angle-Resolved Photoemission Spectroscopy

Journal Article · · Physical Review Letters
OSTI ID:962462
We use angle-resolved photoemission spectroscopy to investigate the electronic properties of the newly discovered iron-arsenic superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} and nonsuperconducting BaFe{sub 2}As{sub 2}. Our study indicates that the Fermi surface of the undoped, parent compound BaFe{sub 2}As{sub 2} consists of hole pocket(s) at {Lambda}(0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave calculations. Upon doping with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole doping within a rigid-band shift model. Our results also indicate that the full-potential linearized plane wave calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites.
Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC02-07CH11358
OSTI ID:
962462
Report Number(s):
IS-J 7342
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 17 Vol. 101; ISSN 0031-9007
Country of Publication:
United States
Language:
English

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