Vapor-Phase Synthesis of Gallium Phosphide Nanowires

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Crystal Growth & Design

DOI:https://doi.org/10.1021/cg8008305· OSTI ID:958961

Gu, Dr Zhanjun ^[1]; Paranthaman, Mariappan Parans ^[2]; Pan, Zhengwei ^[1]

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1. University of Georgia, Athens, GA
2. ORNL

Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III-V compound nanowires.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 958961
• Journal Information: Crystal Growth & Design, Journal Name: Crystal Growth & Design Journal Issue: 1 Vol. 9
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
FURNACES
GALLIUM
GALLIUM PHOSPHIDES
NANOSTRUCTURES
PHOSPHORUS
SYNTHESIS
TWINNING