Interaction of 1/3?11 0?(0001) edge dislocation with point defect clusters created in displacement cascades in a-zirconium.

Journal Article · Sat Jan 01 04:00:00 EST 2005 · Materials Science and Engineering A

DOI:https://doi.org/10.1016/j.msea.2005.03.055· OSTI ID:958744

Voskoboinikov, Roman E ^[1]; Osetskiy, Yury N ^[2]; Bacon, David J ^[1]

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1. University of Liverpool
2. ORNL

Atomic-scale details of the interaction of a 1/3 11{bar 2}0 (0001) edge dislocation, which dissociates in the basal plane, with four typical vacancy and self-interstitial atom (SIA) clusters created by displacement cascades in a-zirconium are investigated by computer modelling. A triangular cluster of SIAs lying within a basal atomic plane adjacent to the dislocation glide plane is not absorbed by the dislocation but is pushed along by the leading partial. A 3-D SIA cluster lying across the glide plane is completely absorbed by the dislocation by creation of two super-jogs. The dislocation also climbs by interaction with a prismatic vacancy cluster, but only half of the vacancies are absorbed in this case. For a cluster formed from a basal platelet of vacancies, the dislocation experiences a glide resistance, but both the line and cluster are fully restored after breakaway. Stress-strain curves and the critical stress for dislocation breakaway from a cluster are presented.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 958744
• Journal Information: Materials Science and Engineering A, Journal Name: Materials Science and Engineering A Vol. 400-401
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
COMPUTERS
DISLOCATIONS
EDGE DISLOCATIONS
POINT DEFECTS
VACANCIES