Atomic-level interaction of an edge dislocation and localized obstacles in fcc and bcc metals.

Conference · Thu Jan 01 04:00:00 EST 2004

OSTI ID:958741

Osetskiy, Yury N ^[1]; Bacon, David J ^[2]

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1. ORNL
2. University of Liverpool

Interaction between a moving dislocation and localized obstacles determines microstructure-induced hardening. The mechanisms and parameters of such interactions are necessary inputs to large scale dislocation dynamics modelling. We have developed a model to investigate these characteristics at the atomic level for dislocation-obstacle interactions under both static (T=0K) and dynamic (T>0K) conditions. We present results on hardening due to pinning of edge dislocations at obstacles such as voids, coherent precipitates and stacking fault tetrahedra in bcc-iron and fcc-copper at temperatures from 0 to 600K. It is demonstrated that atomic-scale simulation is required to determine the effects of stress, strain rate and temperature and that such effects cannot always be rationalized within continuum theory.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 958741
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
EDGE DISLOCATIONS
FRACTURES
HARDENING
SIMULATION
STACKING FAULTS
STRAIN RATE