Atomic layer deposition of Cu{sub 2}S for future application in photovoltaics.
Alternating exposure to bis(N,N{prime}-di-sec-butylacetamidinato)dicopper(I) and hydrogen sulfide is shown to produce high quality chalcocite (Cu{sub 2}S) thin films by atomic layer deposition on silicon and fused silica substrates. The layer-by-layer chemical vapor deposition method enables conformal growth of the phase-pure material at 130 C. X-ray diffraction reveals that polycrystalline high-chalcocite films are deposited preferentially oriented in the <00l> plane. The optical properties of this naturally p-type absorber compare well with previous reports on single crystals, highlighting the applicability of the technique to nanostructured photovoltaics.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 958542
- Report Number(s):
- ANL/MSD/JA-63579
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 2009 Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
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