Transport in Charged Defect-Rich ..pi..-Conjugated Polymers

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Journal of Physical Chemistry C

DOI:https://doi.org/10.1021/jp900616g· OSTI ID:958235

Gregg, B A

Some models of charge transport in {pi}-conjugated polymers treat these materials as if they were electrical insulators. Although this may be appropriate for a few materials, many polymers are effectively doped p-type by a high density of charged defects. Herein, limits are estimated for the charged defect density above which the resulting electrostatic fluctuations may govern transport and for the corresponding free hole density above which space-charge-limited currents should not occur. These limits are lower than the experimentally observed values in many {pi}-conjugated polymers, suggesting that these materials are more accurately described by models of doped semiconductors. This analysis also provides an explanation for two otherwise puzzling experimental observations, the low-field Poole-Frenkel mobility and the correlated energetic disorder.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 958235
• Journal Information: Journal of Physical Chemistry C, Journal Name: Journal of Physical Chemistry C Journal Issue: 15, 2009 Vol. 113; ISSN 1932-7447
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE TRANSPORT
Chemical and Biosciences
DEFECTS
ELECTRICAL INSULATORS
ELECTROSTATICS
FLUCTUATIONS
POLYMERS
TRANSPORT