X-ray excited optical luminescence : Understanding the light emission properties of silicon based nanostructures.
The recent advances in the study of light emission from matter induced by synchrotron radiation: X-ray excited optical luminescence (XEOL) in the energy domain and time-resolved X-ray excited optical luminescence (TRXEOL) are described. The development of these element (absorption edge) selective, synchrotron X-ray photons in, optical photons out techniques with time gating coincide with advances in third-generation, insertion device based, synchrotron light sources. Electron bunches circulating in a storage ring emit very bright, widely energy tunable, short light pulses (<100 ps), which are used as the excitation source for investigation of light-emitting materials. Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si-CdSe heterostructures) is used to illustrate the applicability of these techniques and their great potential in future applications.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC); CFI; OIT; CRC of Canada; USNRC; CIHR; MMO(of Ontario)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 953804
- Report Number(s):
- ANL/XSD/JA-59103; CPCHFT; TRN: US1001357
- Journal Information:
- ChemPhysChem, Vol. 8, Issue 18 ; 2007; ISSN 1439-4235
- Country of Publication:
- United States
- Language:
- ENGLISH
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