Suppression of conductivity in Mn-Doped ZnO Thin Films
Journal Article
·
· Journal of Applied Physics, 105(1):013715
We studied the dopant concentration distribution and conductivity in ZnO:Mn films grown by metalorganic chemical vapor deposition (MOCVD). The ion beam, surface and microstructural properties of undoped ZnO films were compared with Mn-doped ZnO films. Suppression of ZnO conductivity was noticed up to ~ 4.5 atom% Mn doping. The presence of Mn2+, confirmed by X-ray photoelectron spectroscopy (XPS), is correlated with the reduction in conductivity. No major change in the activation energy (~40 meV) and a reduction in the Zn/O ratio as a function of Mn concentration in highly sensitive proton induced X-ray emission (PIXE) technique also support this hypothesis. We discuss our results from a view point of homogeneous Mn distribution, elemental XPS ratio offsets and secondary phase formations in ZnO films.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 951825
- Report Number(s):
- PNNL-SA-61963; 22290a; 22290; KP1704020
- Journal Information:
- Journal of Applied Physics, 105(1):013715, Journal Name: Journal of Applied Physics, 105(1):013715 Journal Issue: 1 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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