Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Electrical contacts to nanotubes and nanowires : why size matters.

Journal Article · · Proposed for publication in Nanoletters.
OSTI ID:951696

Electrical contacts to semiconductors play a key role in electronics. For nanoscale electronic devices, particularly those employing novel low-dimensionality materials, contacts are expected to play an even more important role. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignment, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of quasi-one-dimensional structures make them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of quasi-one-dimensional materials.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
951696
Report Number(s):
SAND2006-1018J
Journal Information:
Proposed for publication in Nanoletters., Journal Name: Proposed for publication in Nanoletters.
Country of Publication:
United States
Language:
English

Similar Records

Molecular nanowires of 1 nm diameter from capillary filling of single-walled carbon nanotubes
Journal Article · Thu Sep 02 00:00:00 EDT 1999 · Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical · OSTI ID:691292

Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
Journal Article · Sat Feb 06 23:00:00 EST 2016 · Journal of Applied Physics · OSTI ID:22494977