Thermal stability of ion-implanted ZnO

Coleman, V; Tan, H; Jagadish, C; Kucheyev, S; Zou, J

doi:10.1063/1.2140481

Title: Thermal stability of ion-implanted ZnO

Journal Article · Thu Jun 16 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2140481· OSTI ID:950088

Coleman, V; Tan, H; Jagadish, C; Kucheyev, S; Zou, J

Zinc oxide single crystals implanted at room temperature with high-dose (1.4 x 10{sup 17} cm{sup -2}) 300 keV As{sup +} ions are annealed at 1000-1200 C. Damage recovery is studied by a combination of Rutherford backscattering/ channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy (AFM). Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily-damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. Such a relatively poor thermal stability of heavily-damaged ZnO has significant implications for understanding results on thermal annealing of ion-implanted ZnO.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: W-7405-ENG-48

OSTI ID:: 950088

Report Number(s):: UCRL-JRNL-213181; APPLAB; TRN: US200910%%68

Journal Information:: Applied Physics Letters, Vol. 87, Issue 23; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
ANNEALING
ATOMIC FORCE MICROSCOPY
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CHANNELING
DEFECTS
EVAPORATION
MONOCRYSTALS
RECRYSTALLIZATION
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TRANSMISSION ELECTRON MICROSCOPY
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Title: Thermal stability of ion-implanted ZnO

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