skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films.

Journal Article · · Appl. Phys. Lett.
DOI:https://doi.org/10.1063/1.1459482· OSTI ID:949646

Barium strontium titanate thin films were deposited by sputtering on Pt/SiO{sub 2} structures using five different host substrates: magnesium oxide, strontium titanate, sapphire, silicon, and vycor glass. These substrates were chosen to provide a systematic change in thermal strain while maintaining the same film microstructure. All films have a weakly textured microstructure. Temperature dependent dielectric measurements from 100-500 K determined that decreasing thermal expansion coefficient of the host substrate (i.e., larger tensile thermal strain) reduced the film dielectric permittivity. The experimentally determined Curie-Weiss temperature decreased with increasing tensile thermal strain and the Curie-Weiss constant increased with tensile strain as predicted by Pertsev et al.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC02-06CH11357
OSTI ID:
949646
Report Number(s):
ANL/MSD/JA-42798; APPLAB; TRN: US201012%%429
Journal Information:
Appl. Phys. Lett., Vol. 80, Issue 11 ; Mar. 18, 2002; ISSN 0003-6951
Country of Publication:
United States
Language:
ENGLISH