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U.S. Department of Energy
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Gate-all-around silicon nano-wire transistors fabricated in front end CMOS process.

Journal Article · · Proposed for publication in Applied Physics Letters.
OSTI ID:948680

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
948680
Report Number(s):
SAND2008-5601J
Journal Information:
Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English

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