Lateral Shearing Interferometer for Measuring Photoinduced Refractive Index Change in As2S3

Journal Article · Fri Sep 05 00:00:00 EDT 2008 · Review of Scientific Instruments, 79 (9):Article no. 095101

DOI:https://doi.org/10.1063/1.2973640· OSTI ID:947038

Krishnaswami, Kannan; Bernacki, Bruce E; Ho, Nicolas; Allen, Paul J; Anheier, Norman C

We have built and demonstrated a lateral shearing interferometer as a process engineering and control tool for the fabrication and characterization of direct-laser-written waveguide structures in chalcogenide glasses. Photoinduced change in refractive index of 0.154 ± 0.002 was measured for as-deposited amorphous As2S3 thin films at 633 nm with an estimated measurement accuracy of 1.3% for this air-gap interferometer configuration. The simple design of this interferometer can very easily be adapted to other wavelengths including mid- and long-wave infrared regions to measure changes in refractive index or material inhomogeneities in transmissive materials.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 947038
• Report Number(s): PNNL-SA-60793; NN2001000
• Journal Information: Review of Scientific Instruments, 79 (9):Article no. 095101, Journal Name: Review of Scientific Instruments, 79 (9):Article no. 095101 Journal Issue: 9 Vol. 79; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
ARSENIC SULFIDES
CHALCOGENIDES
DESIGN
GLASS
INFRARED RADIATION
INTERFEROMETERS
REFRACTIVE INDEX
Shearing
interferometer
chalcogenide
refractive index
THIN FILMS