Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals
- Univ. of California, Berkeley, CA (United States)
The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 944976
- Report Number(s):
- LBNL--972E
- Country of Publication:
- United States
- Language:
- English
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