Effect of nitrogen addition to Ar/CH{sub 4} plasmas on the growth, morphology and field emission of ultrananocrystalline diamond.
The effect of the addition of nitrogen to plasmas during the CVD growth of diamond films on field emission properties has been studied. Ultrananocrystalline diamond with 5-15 nm grain size has been grown with the incorporation of nitrogen up to 8 x 10{sup 20} atoms/cm{sup 3}. Field emission onsets as low as 2 V/{mu}m have been achieved. UV Raman and electron energy loss spectroscopy (EELS) measurements show an increase in the sp{sup 2} content in the films with nitrogen in the plasma compared to films without N{sub 2} addition. A model is discussed in which the nitrogen preferentially enters the grain boundaries and promotes sp{sup 2} bonding in the neighboring carbon atoms. The increase in the sp{sup 2} content appears to improve the field emission properties of the films.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); USDOD
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 942975
- Report Number(s):
- ANL/CHM/JA-36425; TRN: US201002%%476
- Journal Information:
- Diamond Related Mater., Vol. 11, Issue 1 ; Jan. 2002; ISSN 0925-9635
- Country of Publication:
- United States
- Language:
- ENGLISH
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