Metal-insulator transition in $$(LaMnO_3)_{2n}/(SrMnO_3)_n$$ superlattices
Journal Article
·
· Physical Review B
- ORNL
- Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing
The modulation of charge density and spin order in (LaMnO{sub 3}){sub 2n}/(SrMnO{sub 3}){sub n} (n = 1-4) superlattices is studied via Monte Carlo simulations of the double-exchange model. G-type antiferromagnetic barriers in the SrMnO{sub 3} regions with low charge density are found to separate ferromagnetic LaMnO{sub 3} layers with high charge density. A metal-insulator transition with increasing n is observed in the direction perpendicular to the interfaces. Our simulations provide insight into how disorder-induced localization may cause the metal-insulator transition occurring at n = 3 in experiments.
- Research Organization:
- Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 941604
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 78
- Country of Publication:
- United States
- Language:
- English
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