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Title: Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

Abstract

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

Inventors:
 [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
941132
Patent Number(s):
7,375,332
Application Number:
11/366,289
Assignee:
Sandia Corporation (Albuquerque, NM) ALO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices. United States: N. p., 2008. Web.
Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices. United States.
Horn, Kevin M. Tue . "Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices". United States. https://www.osti.gov/servlets/purl/941132.
@article{osti_941132,
title = {Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices},
author = {Horn, Kevin M},
abstractNote = {A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {5}
}

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