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Analysis of proton and heavy-ion irradiation effects on phase change memories with MOSFET and BJT selectors.

Conference ·
OSTI ID:940530
 [1];  [1];  [2];  [2];  [2]; ;
  1. STMicroelectronics, Agrate Brianza (Mi), Italy
  2. University of Padova, Italy
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
940530
Report Number(s):
SAND2008-0907C
Country of Publication:
United States
Language:
English

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Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
IRRADIATION
MOSFET
PROTONS
RADIATION EFFECTS