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Chemical bonding, structure, and morphology of Mg/{alpha}-Al{sub 2}O{sub 3} and MgO/{alpha}-Al{sub 2}O{sub 3} interfaces

Conference ·
OSTI ID:94035
;  [1]
  1. Univ. of Maine, Orono, ME (United States). Lab. for Surface Science and Technology
Ultra-thin films of Mg and MgO were grown on {alpha}-Al{sub 2}O{sub 3} (10{bar 1}2) surfaces (r-cut sapphire) and studied using reflection high energy electron diffraction (RHEED) and x-ray photoelectron spectroscopy (XPS). When Mg is deposited at 30 C in ultra-high vacuum (UHV), the first monolayer of Mg atoms chemically bonds to the oxygen anions of the sapphire surface. At Mg coverages above a monolayer, a polycrystalline metallic Mg overlayer is formed. Annealing above 250 C in UHV causes the metallic Mg to desorb from the surface. However, annealing above 250 C in 10{sup {minus}6}torr O{sub 2}produces a polycrystalline MgO film. This MgO film recrystallizes after annealing in O{sub 2} at 900 C for 60 minutes and exhibits a crystallographic orientation of MgO (100) {vert_bar}{vert_bar} {alpha}-Al{sub 2}O{sub 3} (10{bar 1}2). RHEED indicates that the recrystallized MgO layer dewets the sapphire surface and forms islands. When Mg is deposited at 30 C in 10{sup {minus}6} torr O{sub 2}, a polycrystalline MgO layer is created. This layer also becomes recrystallized and dewet the sapphire surface after extended annealing in O{sub 2} at 900 C. No evidence for a MgAl{sub 2}O{sub 4} spinel phase was observed.
DOE Contract Number:
FG02-90ER45417
OSTI ID:
94035
Report Number(s):
CONF-941144--; ISBN 1-55899-258-8
Country of Publication:
United States
Language:
English