THERMOELECTRIC PROPERTIES OF SILICON-GERMANIUM TYPE I CLATHRATES

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Journal of Applied Physics

OSTI ID:938742

Wang, Hsin ^[1]; Martin, J ^[2]; Nolas, George S. ^[2]; Yang, Jihui ^[3]

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1. ORNL
2. University of South Florida
3. General Motors Corporation

We report the synthesis and chemical, structural, and transport properties characterization of Ba8Ga16SixGe30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si subsitution (4 < x < 14). Substitution of 20 at. % Si within the Ga-Ge lattice framework of the type I clathrate Ba8Ga16Ge30 results in thermoelectric enhancement. The unique dependences of n, , |S|, and m* with Si substitution, and the lack of variation in the Ga-to-group IV element ratios may imply a modified band structure with x. These results indicate an additional method in tuning the electronic properties of Ba8Ga16Ge30 for thermoelectric applications.

• Research Organization: Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory
• Sponsoring Organization: EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 938742
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CLATHRATES
SYNTHESIS
THERMOELECTRIC PROPERTIES
TRANSPORT
TUNING