Processing technologies for ferroelectric thin films and heterostructures.
Basic scientific and technological advances on ferroelectric thin films and heterostructures are discussed in relation to the work on nonvolatile ferroelectric random access memories (NVFRAMs) performed by different groups during the last seven years. A reasonable understanding of the synthesis and microstructure-property relationships of ferroelectric thin films for NVFRAMs is demonstrated. Materials integration strategies developed to fabricate ferroelectric capacitors with practically no fatigue or imprint, long polarization retention, and low leakage current are discussed. These properties have been obtained using two ferroelectric materials, Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} (PZT) and SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT), that are the main candidates for application to the first generation of commercial NVFRAMs. A discussion of current knowledge and future research directions is presented.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- ER
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 938257
- Report Number(s):
- ANL/MSD/JA-28655
- Journal Information:
- Ann. Rev. Mater. Sci., Journal Name: Ann. Rev. Mater. Sci. Journal Issue: 1998 Vol. 28
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.
Qualitative model for the fatigue-free behavior of SrBi{sub 2}Ta{sub 2}O{sub 9}