Molecular-dynamics simulation of grain-boundary diffusion creep.
Molecular-dynamics (MD) simulations are used, for the first time, to study grain-boundary diffusion creep of a model polycrystalline silicon microstructure. Our fully dense model microstructures, with a grain size of up to 7.5 nm, were grown by MD simulations of a melt into which small, randomly oriented crystalline seeds were inserted. In order to prevent grain growth and thus to enable steady-state diffusion creep to be observed on a time scale accessible to MD simulations (of typically 10{sup -9}s), our input microstructures were tailored to (i) have a uniform grain shape and a uniform grain size of nm dimensions and (ii) contain only high-energy grain boundaries which are known to exhibit rather fast, liquid-like self-diffusion. Our simulations reveal that under relatively high tensile stresses these microstructures, indeed, exhibit steady-state diffusion creep that is homogenous (i.e., involving no grain sliding), with a strain rate that agrees quantitatively with that given by the Coble-creep formula.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- ER
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 938069
- Report Number(s):
- ANL/MSD/JA-26602
- Journal Information:
- Interface Sci., Journal Name: Interface Sci. Journal Issue: 1998 Vol. 6; ISSN 0927-7056; ISSN INSCE9
- Country of Publication:
- United States
- Language:
- ENGLISH
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