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Title: Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator

Abstract

The RF source High Voltage Converter Modulator (HVCM) systems installed on the Spallation Neutron Source (SNS) have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved Insulated Gate Bipolar Transistor (IGBT) switch plate is under development to help mitigate these failures. The new design incorporates two significant improvements. The IGBTs are upgraded to 4500 V, 1200 A, press-pack devices, which increase the voltage margin, facilitate better cooling, and eliminate explosive disassembly of the package in the event of device failure. The upgrade to an advanced IGBT gate drive circuit decreases switching losses and improves fault-condition response. The upgrade design and development status will be presented.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
937467
Report Number(s):
SLAC-PUB-13385
TRN: US0805790
DOE Contract Number:
AC02-76SF00515
Resource Type:
Conference
Resource Relation:
Conference: Presented at 24th International Linear Accelerator Conference (LINAC08), Victoria, British Columbia, Canada, 29 Sep - 3 Oct 2008
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; DESIGN; EXPLOSIVES; LINEAR ACCELERATORS; NEUTRON SOURCES; PLATES; SPALLATION; TRANSISTORS; Other,ENG

Citation Formats

Kemp, Mark A., Burkhart, Craig, Nguyen, Minh N., /SLAC, Anderson, David E., and /Oak Ridge. Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator. United States: N. p., 2008. Web.
Kemp, Mark A., Burkhart, Craig, Nguyen, Minh N., /SLAC, Anderson, David E., & /Oak Ridge. Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator. United States.
Kemp, Mark A., Burkhart, Craig, Nguyen, Minh N., /SLAC, Anderson, David E., and /Oak Ridge. Thu . "Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator". United States. doi:. https://www.osti.gov/servlets/purl/937467.
@article{osti_937467,
title = {Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator},
author = {Kemp, Mark A. and Burkhart, Craig and Nguyen, Minh N. and /SLAC and Anderson, David E. and /Oak Ridge},
abstractNote = {The RF source High Voltage Converter Modulator (HVCM) systems installed on the Spallation Neutron Source (SNS) have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved Insulated Gate Bipolar Transistor (IGBT) switch plate is under development to help mitigate these failures. The new design incorporates two significant improvements. The IGBTs are upgraded to 4500 V, 1200 A, press-pack devices, which increase the voltage margin, facilitate better cooling, and eliminate explosive disassembly of the package in the event of device failure. The upgrade to an advanced IGBT gate drive circuit decreases switching losses and improves fault-condition response. The upgrade design and development status will be presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Sep 18 00:00:00 EDT 2008},
month = {Thu Sep 18 00:00:00 EDT 2008}
}

Conference:
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  • The 1-MW High Voltage Converter Modulators [1] have operated in excess of 250,000 hours at the Spallation Neutron Source. Increased demands on the accelerator performance require increased modulator reliability. An effort is underway at SLAC National Accelerator Laboratory to redesign the modulator H-bridge switch plate with the goals of increasing reliability and performance [2]. The major difference between the SLAC design and the existing design is the use of press-pack IGBTs. Compared to other packaging options, these IGBTs have been shown to have increased performance in pulsed-power applications, have increased cooling capability, and do not fragment and disassemble during amore » fault event. An overview of the SLAC switch plate redesign is presented. Design steps including electrical modeling of the modulator and H-bridge, development of an integrated IGBT clamping mechanism, and fault tests are discussed. Experimental results will be presented comparing electrical performance of the SLAC switch plate to the existing switchplate under normal and fault conditions.« less
  • Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with twomore » different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.« less
  • SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundantmore » power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.« less
  • The High Voltage Converter Modulators (HVCMs) at the Spallation Neutron Source (SNS) have operated in excess of a combined 250,000 hours. Performance and reliability improvements to the HVCM are ongoing to increase modulator availability as accelerator system demands increase. There is a relatively large amount of energy storage in the HVCMs, {approx}180 kJ. This energy has the potential to dump into unsuppressed faults, cause damage, and increase the time to repair. The 'fusing switch' concept involves isolation of this stored energy from the location of the most common faults. This paper introduces this concept and its application to the HVCMs.
  • The 1700 MeV, 100 mA Accelerator Production of Tritium (APT) Proton Linac will require 244 1 MW, continuous wave RF systems. 1 MW continuous wave klystrons are used as the RF source and each klystron requires 95 kV, 17 A of beam voltage and current. The cost of the DC power supplies is the single largest percentage of the total RF system cost. Power supply reliability is crucial to overall RF system availability and AC to DC conversion efficiency affects the operating cost. The Low Energy Demonstration Accelerator (LEDA) being constructed at Los Alamos National Laboratory (LANL) will serve asmore » the prototype and test bed for APT. The design of the RF systems used in LEDA is driven by the need to field test high efficiency systems with extremely high reliability before APT is built. The authors present a detailed description and test results of one type of advanced high voltage power supply system using Insulated Gate Bipolar Transistors (IGBTs) that has been used with the LEDA High Power RF systems. The authors also present some of the distinctive features offered by this power supply topology, including crowbarless tube protection and modular construction which allows graceful degradation of power supply operation.« less