Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator
The RF source High Voltage Converter Modulator (HVCM) systems installed on the Spallation Neutron Source (SNS) have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved Insulated Gate Bipolar Transistor (IGBT) switch plate is under development to help mitigate these failures. The new design incorporates two significant improvements. The IGBTs are upgraded to 4500 V, 1200 A, press-pack devices, which increase the voltage margin, facilitate better cooling, and eliminate explosive disassembly of the package in the event of device failure. The upgrade to an advanced IGBT gate drive circuit decreases switching losses and improves fault-condition response. The upgrade design and development status will be presented.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 937467
- Report Number(s):
- SLAC-PUB-13385
- Country of Publication:
- United States
- Language:
- English
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