Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

Conference · Mon Aug 11 04:00:00 EDT 2008

OSTI ID:937156

Hossain, A; Babalola, S; Bolotnikov, A E; Camarda, G S; Cui, Y; Yang, G; Guo, M; Kochanowska, D; Mycielski, A; Burger, A; James, R B

Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{sub 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.

• Research Organization: Brookhaven National Laboratory
• Sponsoring Organization: Doe/Office Of Nonproliferation & National Security
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 937156
• Report Number(s): BNL--81418-2008-CP; NN2001050
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CDTE SEMICONDUCTOR DETECTORS
CHEMICAL POLISHING
ETCHING
GAMMA DETECTION
MANGANESE TELLURIDES
ROUGHNESS
ZINC TELLURIDES