Non-invasive current and voltage imaging techniques for integrated circuits using scanning probe microscopy. Final report, LDRD Project FY93 and FY94

Technical Report · Thu Jun 01 00:00:00 EDT 1995

DOI:https://doi.org/10.2172/93674· OSTI ID:93674

Campbell, A N; Cole, Jr, E I; Tangyunyong, Paiboon

This report describes the first practical, non-invasive technique for detecting and imaging currents internal to operating integrated circuits (ICs). This technique is based on magnetic force microscopy and was developed under Sandia National Laboratories` LDRD (Laboratory Directed Research and Development) program during FY 93 and FY 94. LDRD funds were also used to explore a related technique, charge force microscopy, for voltage probing of ICs. This report describes the technical work performed under this LDRD as well as the outcomes of the project in terms of publications and awards, intellectual property and licensing, synergistic work, potential future work, hiring of additional permanent staff, and benefits to DOE`s defense programs (DP).

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 93674
• Report Number(s): SAND--95-0758; ON: DE95013857
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DATA ACQUISITION SYSTEMS
IMAGE PROCESSING
INTEGRATED CIRCUITS
MICROSCOPY
NONDESTRUCTIVE TESTING
OPTICAL MICROSCOPY
PROGRESS REPORT
SCANNING ELECTRON MICROSCOPY