Computer simulation of Frank Loop contrast in field ion images
A computer model for simulation of the image contrast caused by Frank dislocation loops in field ion tips of fcc materials is presented. The model is based on the shell model for ion image simulation, whereas the displacement field of Frank loops is computed from the exact displacement equation for a closed dislocation loop in an isotropically elastic continuum. A method for taking surface effects into account by superposition of the displacement field of an image loop is introduced. The results indicate that Frank loops will cause image contrast while wholly beneath the surface of the tip, and that vacancy and interstitial loops will cause qualitatively different contrast. The effect of surface relaxation, while quantitatively substantial, does not qualitatively alter these results. Special emphasis is placed on small loops, with respect to which existing contrast theory is inadequate. Some micrographs of ion bombarded iridium tips are presented. These micrographs display contrast effects in excellent agreement with computer plots of interstitial loop contrast.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USAEC
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 932516
- Report Number(s):
- LBL--2200
- Country of Publication:
- United States
- Language:
- English
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