SIMULATION OF STRAIN INDUCED INTERFACE MIGRATION IN SYMMETRIC TILT GRAIN BOUNDARIES
Conference
·
OSTI ID:931712
- ORNL
Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 931712
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular-dynamics method for the simulation of grain-boundary migration.
On the relationship between grain-boundary migration and grain-boundary diffusion by molecular-dynamics simulation
On the relation between sliding and migration of symmetrical tilt grain boundaries
Journal Article
·
Mon Nov 30 23:00:00 EST 1998
· Interface Sci.
·
OSTI ID:938019
On the relationship between grain-boundary migration and grain-boundary diffusion by molecular-dynamics simulation
Conference
·
Wed Jul 01 00:00:00 EDT 1998
·
OSTI ID:665895
On the relation between sliding and migration of symmetrical tilt grain boundaries
Technical Report
·
Thu Jan 31 23:00:00 EST 1991
·
OSTI ID:10132731