Straight Single-Crystalline Germanium Nanowires and their Patterns Grown on Sol-Gel Prepared Gold/Silica Substrates

Journal Article · Fri Dec 31 23:00:00 EST 2004 · Solid State Communications

DOI:https://doi.org/10.1016/j.ssc.2005.01.033· OSTI ID:930696

Pan, Zhengwei ^[1]; Dai, Sheng ^[1]; Lowndes, Douglas H ^[1]

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1. ORNL

Straight single-crystalline Ge nanowires with a uniform diameter distribution of 50-80 nm and lengths up to tens of micrometers were grown in a high yield on sol-gel prepared gold/silica substrates by using Ge powder as the Ge source. Detailed electron microscopy analyses show that the nanowires grow through a vapor-liquid-solid growth mechanism with gold nanoparticles located at the nanowire tips. By using transmission electron microscope grids as the shadow mask, the sol-gel technique can be readily adapted to prepare patterned film-like gold/silica substrates, so that regular micropatterns of Ge nanowires were obtained, which could facilitate the integration of Ge nanowires for characterization and devices.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 930696
• Journal Information: Solid State Communications, Journal Name: Solid State Communications Vol. 134; ISSN 0038-1098; ISSN SSCOA4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
GERMANIUM
GOLD
MONOCRYSTALS
QUANTUM WIRES
SILICON OXIDES
SOL-GEL PROCESS
SUBSTRATES