Magnetic Characterization of CoFeB/MgO and CoFe/MgO Interfaces

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2709619· OSTI ID:930658

Negusse, E; Lussier, A; Dvorak, J; Idzerda, Y; Shinde, S; Nagamine, Y; Furukawa, S; Tsunekawa, K; Djayaprawira, D

The use of CoFeB ferromagnetic electrodes in place of CoFe has been shown to significantly increase the tunneling magnetoresistance (TMR) of MgO based magnetic tunnel junctions (MTJs). By using soft x-ray scattering techniques, we show that the behavior of the magnetic moments located at the CoFe-MgO interface are drastically different from the rest of the CoFe film, whereas the magnetic response of the CoFeB-MgO interfacial moments is coherent with the film's bulk. Our results support the view that the high TMR values observed in MgO based MTJs with CoFeB electrodes are due to the uniform magnetic response of the entire CoFeB electrode including the MgO interfacial moments.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930658
• Report Number(s): BNL--81135-2008-JA
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT ALLOYS
COBALT BORIDES
INTERFACES
IRON ALLOYS
IRON BORIDES
MAGNESIUM OXIDES
MAGNETIC MOMENTS
MAGNETORESISTANCE
SUPERCONDUCTING JUNCTIONS
national synchrotron light source