Real-time X-ray Studies of Gallium Adsorption and Desorption

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2358307· OSTI ID:930574

Ozcan, A; Wang, Y; Ozaydin, G; Ludwig, K; Bhattacharyya, A; Moustakas, T; Siddons, D

Real-time grazing-incidence small-angle x-ray scattering has been employed to study the adsorption and desorption of Ga on c-plane sapphire and Ga-polar GaN surfaces. Formation of self-organized liquid Ga nanodroplets has been observed on sapphire during Ga exposure from an effusion cell at high flux. Subsequent to the Ga deposition, the nanodroplets were nitridated in situ by a nitrogen plasma source, which converted the droplets into GaN nanodots. In addition to the droplet studies, at lower Ga flux, the adsorption and desorption of Ga have been studied in the predroplet regime. For identical processing conditions, significantly different Ga adsorption/desorption rates were observed on sapphire and GaN surfaces.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 930574
• Report Number(s): BNL--80776-2008-JA
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ADSORPTION
DEPOSITION
DESORPTION
GALLIUM
GALLIUM NITRIDES
QUANTUM DOTS
SAPPHIRE
national synchrotron light source