Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth
Recent research has demonstrated the effectiveness of the 'aspect ratio trapping' technique for eliminating threading dislocations in Ge grown selectively in submicron trenches on Si substrates. In this letter, analysis of the mechanisms by which dislocation elimination is achieved has been carried out. Detailed transmission electron microscopy studies reveal that facets, when formed early in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. These dislocations are shown to behave as 'growth dislocations', which are replicated during growth approximately along the facet normal and so are deflected out from the center of the selective epitaxial regions.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 930554
- Report Number(s):
- BNL-80677-2008-JA; APPLAB; TRN: US200904%%586
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 10; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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